On December 13th, KAIST physics professor and Samsung Electronics Technology Institute jointly developed three basic colors - red, green, blue and difficult to make white and other color production techniques. This technology can immediately mark the color on the screen, so if it is commercialized, it will be more vivid than the existing display color.
The professor's research group used LEDs to make LED semiconductors with hexagonal pyramid patterns of only a few μm. If the semiconductor is powered on, various colors will appear with the voltage. The color of the bevel, the corner, and the high point of the hexagonal ball are different. A technique for displaying a plurality of colors according to the magnitude of a voltage has been developed. The research team also produced semiconductors below 300 nm that are smaller than this semiconductor, and it has also been successful.
Professors pointed out that Japan and Germany are also developing LED technology that does not use fluorescent substances to represent various tones. However, it is impossible to cultivate a size of more than 3 inches, and the price is also very expensive. Although there are AMOLEDs different from LEDs, they are mainly used in mobile devices such as smartphones. A related person from Samsung LED said that the research is only the initial stage of research and development, and it can be put into practical use after five years.
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The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.
Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.
the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.
The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.
Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.
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