Cree Upgrade offers process design kits for GaN-on-SiC HEMT devices

Cree (Nasdaq: CREE) announces the upgrade of an advanced process design kit (PDK) based on Agilent's Advanced Design System (ADS) software that enables microwave and RF design engineers to develop silicon carbide substrates A complete set of design and simulation tools for gallium nitride (GaN-on-SiC) HEMT devices.

The PDK combines Agilent's latest ADS and Cree SiC substrate GaN processing specifications and design rules to help engineers reduce the development time of monolithic microwave integrated circuits (MMICs).

Jim Milligan, Director of Radio Frequency (RF) and Microwave at Cree, said: "The latest PDK can help wireless RF design engineers achieve Achieved by using Agilent's 2011 ADS, an industry-leading electronic design automation tool. GaN MMIC processing performance on sharp silicon carbide substrates. This front-end integrated design system provides highly accurate and scalable nonlinear models, parameterized layout cells, design rule checking, seamless layout interoperability, and Effectively design cycles to accelerate the time-to-market of customer products."

Juergen Hartung, Agilent's EEsof EDA plant project manager, said: "With this joint release of PDK, Agilent and Cree's customers can simultaneously acquire Cree's advanced silicon carbide GaN MMIC processing technology and Agilent's integrated design system. And with this advantage, it produces reliable and leading high-power HEMT devices that can be used in today's most challenging applications."

For more information on Cree's RF products, please visit

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